- Title Information
- Title
- Optimization of Co₂MnSi Heusler Alloy Thin Films for Spintronic Applications
- Type of Resource (primo)
- dissertations
- Name:
Personal
- Name Part
- Abudushalamu, Yilidaer
- Role
- Role Term:
Text
- creator
- Name:
Personal
- Name Part
- Xiao, Gang
- Role
- Role Term:
Text
- Advisor
- Name:
Corporate
- Name Part
- Brown University. Department of Physics
- Role
- Role Term:
Text
- sponsor
- Origin Information
- Copyright Date
- 2026
- Physical Description
- Extent
- , None p.
- digitalOrigin
- born digital
- Note:
thesis
- Thesis (Sc. M.)--Brown University, 2026
- Genre (aat)
- theses
- Abstract
- Co₂MnSi (CMS) is a Co-based full-Heusler alloy predicted to exhibit half-metallic ferromagnetism and high spin polarization, making it a promising electrode material for magnetic tunnel junctions (MTJs). Translating these ideal properties into sputtered thin films requires careful control of composition, crystalline ordering, surface roughness, and the CMS/MgO interface. This thesis investigates the growth and early device integration of sputtered CMS thin films, progressing from composition control and baseline film growth to MgO-based interface optimization and MTJ stack design.
An exploratory composite Co/Mn/Si target was first evaluated before the arrival of a commercial CMS alloy target. XPS analysis showed a strongly Mn-deficient and Si-rich composition relative to the ideal Co:Mn:Si = 2:1:1 ratio, indicating that simple geometric control of target area was insufficient to achieve stoichiometric CMS under the present conditions. CMS films subsequently deposited on Si/SiO₂ substrates from the bulk target established a reproducible baseline: the films showed CMS-related crystalline reflections in XRD, soft in-plane ferromagnetism over a deposition temperature range of 480–540°C, and metallic resistivities of 58–77 μΩ·cm.
The project then transitioned to MgO substrates to move toward device-relevant heterostructures. AFM measurements showed that a high-temperature in-situ substrate anneal followed by MgO buffer deposition reduced local template roughness to 0.057 nm. CMS deposited at room temperature on this template (MNC072) preserved a smooth surface of 0.178 nm with Ms = 741 emu/cm³ but no resolvable in-plane anisotropy. CMS deposited at 550°C with the in-situ buffer (MNC074) showed higher Ms = 791 emu/cm³ and clear fourfold in-plane magnetic anisotropy consistent with epitaxial CMS/MgO alignment, at the cost of increased surface roughness. These results identify the central optimization challenge: achieving both smooth morphology and magnetocrystalline anisotropy simultaneously.
Preliminary MTJ device work included MgO barrier-rate calibration by X-ray reflectivity and the design of photolithographic masks for future transport measurements. The proposed stack architecture, switching strategy based on coercive field asymmetry, and fabrication sequence are defined, establishing a process foundation for future CMS/MgO/CMS magnetotransport measurements.
- Subject
- Topic
- spintronics
- Subject
- Topic
- Heusler alloys
- Subject
- Topic
- Magnetic tunnel junctions
- Subject
- Topic
- Tunneling magnetoresistance
- Subject (fast)
(authorityURI="http://id.worldcat.org/fast", valueURI="http://id.worldcat.org/fast/00923121")
- Topic
- Ferromagnetism
- Subject
- Topic
- Magnetic anisotropy
- Language
- Language Term (ISO639-2B)
- English
- Record Information
- Record Content Source (marcorg)
- RPB
- Record Creation Date
(encoding="iso8601")
- 20260516