Radiation damage in silicon sensors is a topic of the utmost importance for the next generation of High Energy Physics experiments, like CMS at the LHC. The damage mechanism from radiation is discussed, as well as, the parametrizations used to characterize said damage. Silicon diodes were characterized, irradiated, and annealed in order to study the change in the properties of the silicon during these processes. The results were consistent with other studies done on the subject.
